Spiral inductor substrate loss modeling in silicon RFICs

被引：22

作者：

Kuhn, WB ^{[1
]}

Yanduru, NK ^{[1
]}

机构：

[1] Kansas State Univ, Dept Elect & Comp Engn, Manhattan, KS 66506 USA

来源：

1998 IEEE RADIO AND WIRELESS CONFERENCE PROCEEDINGS - RAWCON 98 | 1998年

关键词：

spiral inductor; optimization; silicon; RFIC;

D O I：

10.1109/RAWCON.1998.709197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spiral inductors constructed in Silicon IC technologies possess limited quality factors due to series resistive losses, and losses within the semiconducting substrate. A new model for the less understood substrate losses illustrates how these losses can be minimized, providing quality factor increases of up to 230 percent over un-optimized designs.

引用

页码：305 / 308

页数：4