Fabrication of micrometer-sized conical field emitters using femtosecond laser-assisted etching of silicon

被引：8

作者：

Carey, JE ^{[1
]}

Crouch, CH ^{[1
]}

Younkin, R ^{[1
]}

Mazur, E ^{[1
]}

Sheehy, M ^{[1
]}

Friend, C ^{[1
]}

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE | 2001年

关键词：

D O I：

10.1109/IVMC.2001.939660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Arrays of sharp, conical microstructures were obtained by structuring the surface of a silicon wafer using femtosecond laser-assisted etching. Analysis of the arrays shows high, stable field emission without any further processing steps and turn-on fields as low as 1.3 V/mum.

引用

页码：75 / 76

页数：2

共 5 条

[1] Electron emission in intense electric fields [J].

Fowler, RH ;

Nordheim, L .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181

[2]

HEER TH, APPL PHYS LETT, V73, P1673

[3] Femtosecond laser-induced formation of spikes on silicon [J].

Her, TH ;

Finlay, RJ ;

Wu, C ;

Mazur, E .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (04) :383-385

[4] Fabrication and characterisation of ultra sharp silicon field emitters [J].

Huq, SE ;

Grayer, GH ;

Moon, SW ;

Prewett, PD .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3) :150-153

[5] Fabrication of metal field emitter arrays for low voltage and high current operation [J].

Oh, CW ;

Lee, CG ;

Park, BG ;

Lee, JD ;

Lee, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02) :807-810

← 1 →