Highly manufacturable high density phase change memory of 64Mb and beyond

被引：62

作者：

Ahn, SJ ^{[1
]}

Song, YJ ^{[1
]}

Jeong, CW ^{[1
]}

Shin, JM ^{[1
]}

Fai, Y ^{[1
]}

Hwang, YN ^{[1
]}

Lee, SH ^{[1
]}

Ryoo, KC ^{[1
]}

Lee, SY ^{[1
]}

Park, JH ^{[1
]}

Horii, H ^{[1
]}

Ha, YH ^{[1
]}

Yi, JH ^{[1
]}

Kuh, BJ ^{[1
]}

Koh, GH ^{[1
]}

Jeong, GT ^{[1
]}

Jeong, HS ^{[1
]}

Kim, K ^{[1
]}

Ryu, BI ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Adv Technol Dev, Semicond R&D Div, Yongin 449900, Kyunggido, South Korea

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly manufacturable 64Mbit PRAM has been successfully fabricated using N-doped Ge2Sb2Te5(GST) and optimal GST etching process. Using those technologies, it was possible to achieve the low writing current of 0.6mA and clear separation between SET and RESET resistance distributions. The 64Mb PRAM was designed to support commercial NOR Flash memory compatible interfaces. Therefore, the fabricated chip was tested under the mobile application platform and its functionality and reliability has been evaluated by operation temperature dependency, disturbance, endurance, and retention. Finally, it was clearly demonstrated that high density PRAM can be fabricated in the product level with strong reliability to produce new nonvolatile memory markets.

引用

页码：907 / 910

页数：4