The first monomeric, volatile bis-azide single-source precursor to gallium nitride thin films

被引：48

作者：

Miehr, A

Ambacher, O

Rieger, W

Metzger, T

Born, E

Fischer, RA

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

[2] TECH UNIV MUNICH,LEHRSTUHL ANGEW MINERAL & GEOCHEM,D-85747 GARCHING,GERMANY

来源：

CHEMICAL VAPOR DEPOSITION | 1996年 / 2卷 / 02期

关键词：

D O I：

10.1002/cvde.19960020206

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Group III nitrides are strong candidates for use in light emitting diodes and semiconductor lasers. There are, though, a number of shortcoming of currently available precursors. There is a need for less toxic and pyrophoric precursors that can be used for low temperature deposition. Fortunately, the single source nitrogen-rich GaN precursor, building on the concept of intramolecularly based adduct stabilization, shows considerable promise for producing high quality layers.

引用

页码：51 / 55

页数：5

共 36 条

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