Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements

被引：18

作者：

Wellmann, PJ ^{[1
]}

Bushevoy, S ^{[1
]}

Weingärtner, R ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Mat Dept 6, D-91058 Erlangen, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期

关键词：

silicon carbide; absorption measurement; charge carrier concentration; mapping;

D O I：

10.1016/S0921-5107(00)00598-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A non-destructive, absorption measurement based optical method has been developed in order to determine doping type (n- or p-type), doping level and doping level distribution in 4H and 6H silicon carbide (SiC) wafers. The bandgap absorption has been calculated numerically taking into account band filling, band shrinkage and band tailing effects which al e a function of donor and acceptor concentration N-D and N-A, respectively. The numerical results Lire compared with experimental data. A calibration plot of the doping dependence of the absorption of n-type 6H SiC is presented and the application for mapping of the SiC wafer duping level distribution is demonstrated. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：352 / 356

页数：5

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