Evaluation of differential gain of 1.3 μm AlGaInAs/InP strained MQW lasers

被引：18

作者：

Ishikawa, T ^{[1
]}

Higashi, T ^{[1
]}

Uchida, T ^{[1
]}

Fujii, T ^{[1
]}

Yamamoto, T ^{[1
]}

Shoji, H ^{[1
]}

Kobayashi, M ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Differential gain (dg/dn) of AlGaInAs strained MQW lasers was estimated from relaxation oscillation frequency (fr), and compared with that of GaInAsP lasers. The estimated dg/dn of the AlGaInAs laser was 1.1x10(-15) cm(2) at 25 degrees C, which was 1.4 times larger than that of the GaInAsP laser. The AlGaInAs laser also showed less temperature dependence of dg/dn. The degradation of dg/dn in 25-85 degrees C was only 28%, while that of the GaInAsP laser was 51%.

引用

页码：729 / 732

页数：4