Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

被引：83

作者：

Heinrichsdorff, F ^{[1
]}

Krost, A ^{[1
]}

Grundmann, M ^{[1
]}

Bimberg, D ^{[1
]}

Kosogov, A ^{[1
]}

Werner, P ^{[1
]}

机构：

[1] MAX PLANCK INST MIKROSTRUKTURPHYS,D-06120 HALLE,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 23期

关键词：

D O I：

10.1063/1.116575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.5Ga0.5As/GaAs (001) quantum dots (QDs) were grown by metalorganic chemical vapor deposition (MOCVD) on exactly (001) oriented substrates using the Stranski-Krastanow growth mode. The dot density and their relative geometrical arrangement ase found to be strongly dependent on the substrate temperature. The dots have identical square shaped bases oriented along [100]. For high densities a preferential relative alignment of the dots along the [110] directions is found. These dots lend to be arranged in a chainlike pattern with decreasing dot size towards the ends of the chains. From these observations the dot formation profess for In0.5Ga0.5As quantum dots is suggested to be driven by energetics whereas the relative orientation is governed by kinetic effects. (C) 1996 American Institute of Physics.

引用

页码：3284 / 3286

页数：3

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