A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

被引：26

作者：

Baltus, PGM ^{[1
]}

Wagemans, AG ^{[1
]}

Dekker, R ^{[1
]}

Hoogstraate, A ^{[1
]}

Maas, H ^{[1
]}

Tombeur, A ^{[1
]}

van Sinderen, J ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1998年 / 33卷 / 12期

关键词：

frequency divider; IF circuits; LNA; mixer; RF front ends; silicon on anything;

D O I：

10.1109/4.735549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test IC's are discussed: A fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits, Measurement results show that using this technology, significant power savings are possible for RF circuits.

引用

页码：2074 / 2079

页数：6

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[2]

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[4]

Wagemans A., 1998, IEEE INT SOL STAT CI, P250

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