A flip-chip MMIC design with coplanar waveguide transmission line in the W-band

被引:40
作者
Hirose, T [1 ]
Makiyama, K
Ono, K
Shimura, TM
Aoki, S
Ohashi, Y
Yokokawa, S
Watanabe, Y
机构
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Fujitsu Labs Ltd, Kawasaki, Kanagawa 2118588, Japan
[3] Fujitsu Quantum Devices Ltd, Koufu, Yamanashi 4093800, Japan
关键词
amplifier; CPW; flip-chip; HEMT; W-band;
D O I
10.1109/22.739211
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a design method for flip-chip monolithic millimeter-wave integrated circuits (MMIC's) with a coplanar waveguide (CPW) transmission line for W-band applications. We proposed a test structure for obtaining accurate dip-chip CPW line models. We examined the transmission line characteristics of the CPW line using the test structure in the millimeter-wave range and modeled them. Using the CPW line models, we designed and fabricated both two- and three-stage amplifiers using 0.15-mu m InGaP/InGaAs high electron-mobility transistor technology. The maximum power gain of the two-stage amplifier is 12 dB at 79 GHz, The three-stage amplifier has a maximum power gain of 16 dB at 77 GHz, The agreement of measured S-parameters with calculated results demonstrates that the proposed test structure is suitable for characterizing flip-chip CPW lines and provides very accurate models.
引用
收藏
页码:2276 / 2282
页数:7
相关论文
共 15 条
[1]  
Aoki S, 1997, IEEE MTT-S, P731, DOI 10.1109/MWSYM.1997.602894
[2]  
Arai Y, 1997, IEEE MTT-S, P447, DOI 10.1109/MWSYM.1997.602829
[3]  
BAUMAN G, 1996, 26 EUMC DIG, P98
[4]   EVALUATION OF QUASI-STATIC MATRIX PARAMETERS FOR MULTICONDUCTOR TRANSMISSION-LINES USING GALERKINS METHOD [J].
BAZDAR, MB ;
DJORDJEVIC, AR ;
HARRINGTON, RF ;
SARKAR, TK .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (07) :1223-1228
[5]  
Berg M, 1996, MICROW OPT TECHN LET, V11, P139, DOI 10.1002/(SICI)1098-2760(19960220)11:3<139::AID-MOP8>3.0.CO
[6]  
2-M
[7]  
Haydl WH, 1997, IEEE MTT-S, P1281, DOI 10.1109/MWSYM.1997.596561
[8]  
KAMOZAKI K, 1997, 19 ANN IEEE GAAS IC, P275
[9]  
Krems T, 1996, IEEE MTT-S, P247, DOI 10.1109/MWSYM.1996.508504
[10]  
Krems T, 1997, IEEE MTT-S, P987, DOI 10.1109/MWSYM.1997.602967