Compensation effects in Mg-doped GaN epilayers

被引：36

作者：

Eckey, L

Von Gfug, U

Holst, J

Hoffmann, A

Schineller, B

Heime, K

Heuken, M

Schon, O

Beccard, R

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52056 Aachen, Germany

[3] AIXTRON AG, D-52072 Aachen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; P-doping; compensation; photoluminescence; deep levels;

D O I：

10.1016/S0022-0248(98)00344-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The compensation of Mg-doped GaN is systematically studied by low-temperature photoluminescence (PL) using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurements. The compensation mechanism is directly related to the incorporation of Mg. Three different deep donor levels are found at 240 +/- 30, 350 +/- 30 and 850 +/- 30 meV from the conduction band. With increasing excitation density in photoluminescence measurements these levels are subsequently neutralized giving rise to a Jeep unstructured donor-acceptor pair (DAP) emission. These emissions exhibit a blueshift that saturates at higher densities, thus excluding band fluctuations as the prime mechanism for the low energy of the observed DAP bands. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：523 / 527

页数：5

共 9 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].

DINGLE, R ;

ILEGEMS, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&

[3]

Efros A. L., 1984, ELECT PROPERTIES DOP

[4] SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS [J].

GISLASON, HP ;

YANG, BH ;

LINNARSSON, M .

PHYSICAL REVIEW B, 1993, 47 (15) :9418-9424

[5]

Hacke P, 1996, APPL PHYS LETT, V68, P1362, DOI 10.1063/1.116080

[6] Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE [J].

Heitz, R ;

Moll, E ;

Kutzer, V ;

Wiesmann, D ;

Lummer, B ;

Hoffmann, A ;

Broser, I ;

Baume, P ;

Taudt, W ;

Sollner, J ;

Heuken, M .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :307-311

[7] PAIR SPECTRA IN GAP [J].

HOPFIELD, JJ ;

GERSHENZON ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1963, 10 (05) :162-&

[8]

NAKAMURA S, 1992, JPN J APPL PHYS, V31, P191

[9]

SCHINELLER B, 1997, IN PRESS P INT C SIC

← 1 →