Photovoltaic measurement of the built-in potential in organic light emitting diodes and photodiodes

被引:196
作者
Malliaras, GG [1 ]
Salem, JR [1 ]
Brock, PJ [1 ]
Scott, JC [1 ]
机构
[1] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA
关键词
D O I
10.1063/1.368227
中图分类号
O59 [应用物理学];
学科分类号
摘要
We measure the voltage at which the current under illumination in poly[2-methoxy, 5-(2-ethylhexoxy)-1,4-phenylene vinylene] based light emitting diodes is equal to the dark current. At low temperatures, this voltage, which we term the ''compensation'' voltage, is found to be equal to the built-in potential, as measured with electroabsorption on the same diode. Diffusion of thermally injected charges at room temperature, however, shifts the compensation voltage to lower values. A model explaining this behavior is developed and its implications for the operation of organic light emitting diodes and photovoltaic cells are briefly discussed. (C) 1998 American Institute of Physics.
引用
收藏
页码:1583 / 1587
页数:5
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