LETI/LIR's amorphous silicon uncooled microbolometer development

被引：49

作者：

Tissot, JL ^{[1
]}

Rothan, F ^{[1
]}

Vedel, C ^{[1
]}

Vilain, M ^{[1
]}

Yon, JJ ^{[1
]}

机构：

[1] CEA, LETI, DOPT, Grenoble 9, France

来源：

INFRARED DETECTORS AND FOCAL PLANE ARRAYS V | 1998年 / 3379卷

关键词：

microbolometer; uncooled; infrared detector; amorphous silicon;

D O I：

10.1117/12.317580

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost 2D IR arrays. LETI/LIR, which has been involved in this field for a few years, has chosen resistive amorphous silicon as thermometer for its uncooled microbolometer development. After a first phase dedicated to acquisition of the most important detector parameters in order to help the modeling and technological development, an IRCMOS laboratory model (256 x 64 with a pitch of 50 mu m) was realized and characterized. It was shown that NETD of 90 mK at f/1, 25 Hz and 300 K background can be obtained with high thermal insulation (1.2 10(7) K/W).

引用

页码：139 / 144

页数：6