Weak localization in p-type quantum wells

被引：19

作者：

Averkiev, NS ^{[1
]}

Golub, LE ^{[1
]}

Pikus, GE ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 10期

关键词：

D O I：

10.1134/1.1187574

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A weak-localization theory is derived for quantum heterostructures with strong spin-orbit interaction that predicts anomalous magnetoresistance. This theory treats real quantum wells with a few occupied quantum-well subbands. It is shown that in the presence of intense elastic transitions between these subbands the parameters that define the conductivity in classically weak magnetic fields are averaged efficiently. In the opposite limiting case, all the subbands give independent contributions to the anomalous magnetoresistance. Relevant characteristic magnetic fields are calculated for arbitrary ratios between the times for phase breaking and intersubband transitions. (C) 1998 American Institute of Physics. [S1063-7826(98)01710-4].

引用

页码：1087 / 1095

页数：9

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