X-ray reflectivity of silicon on insulator wafers

The ability of X-ray reflectivity to analyse different silicon on insulator structures is underlined. The standard geometry with first reflection occurring at the surface gives information about the thickness, roughness, and density of the layers. Deeply buried interfaces, i.e. in between thick wafers, are analysed with a non-standard geometry (the first reflection occurs at the buried interface) and with a high-energy radiation. These two methods are, respectively, illustrated by the reflectivity measurements of (SiO2/Si/SiO2/bulk Si) and (bulk Si/thermal SiO2/native SiO2/bulk Si) bonded structures, and are explained in the framework of kinematic theory of X-ray reflectivity. (C) 2001 Elsevier Science Ltd. All rights reserved.