Characterization of transparent conductors in indium zinc oxide and their application to thin-film-transistor liquid-crystal displays

被引：14

作者：

Takatsuji, H ^{[1
]}

Hiromori, T ^{[1
]}

Tsujimoto, K ^{[1
]}

Tsuji, S ^{[1
]}

Kuroda, K ^{[1
]}

Saka, H ^{[1
]}

机构：

[1] IBM Japan Ltd, Display Technol, Yamato, Kanagawa 242, Japan

来源：

FLAT-PANEL DISPLAY MATERIALS-1998 | 1998年 / 508卷

关键词：

D O I：

10.1557/PROC-508-315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Investigation of the properties of indium zinc oxide (IZO) thin films sputter-deposited on LCD-grade glass substrate showed that the resistivity of an IZO film decreases markedly as the substrate temperature is increased from room-temperature to 120 degrees C. This phenomenon can be attributed to the growth of In-Zn intermetallic compounds in the amorphous region as a result of annealing. The compound growth was observed by plan-view transmission electron microscopy. Although the transmittance and resistivity of IZO are inferior to those of indium-tin oxide, these disadvantages do not present any difficulties in the practical use of IZO for designing TFT-LCDs. Since IZO is an amorphous material, we propose a five-mask process with this characteristic.

引用

页码：315 / 320

页数：6