Nano-sized Ag-inserted amorphous ZnSnO3 multilayer electrodes for cost-efficient inverted organic solar cells
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作者:
Choi, Yoon-Young
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Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Choi, Yoon-Young
[1
]
Choi, Kwang-Hyuk
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Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Choi, Kwang-Hyuk
[1
]
Lee, Hosun
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Kyung Hee Univ, Dept Appl Phys, Yongin 446701, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Lee, Hosun
[2
]
Lee, Hosuk
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Kyung Hee Univ, Dept Appl Phys, Yongin 446701, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Lee, Hosuk
[2
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Kang, Jae-Wook
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KIMS, Dept Mat Proc, Changwon Si 641831, Gyeongnam, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Kang, Jae-Wook
[3
]
Kim, Han-Ki
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Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
Kim, Han-Ki
[1
]
机构:
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
[2] Kyung Hee Univ, Dept Appl Phys, Yongin 446701, Gyeonggi Do, South Korea
[3] KIMS, Dept Mat Proc, Changwon Si 641831, Gyeongnam, South Korea
A sheet resistance- and optical transmittance-tunable amorphous ZnSnO3 (ZTO) multilayer electrode created through the insertion of a nano-scale Ag layer is demonstrated as an indium-free transparent conducting electrode for cost-efficient inverted organic solar cells (IOSCs). Due to the antireflection effect, the ZTO/Ag/ZTO/glass exhibited a high transmittance of 86.29% in the absorption wavelength region of the organic active layer and a low resistivity of 3.24 x 10(-5) Omega cm, even though the ZTO/Ag/ZTO electrode was prepared at room temperature. The metallic conductivity of the electrode indicates that its electrical conductivity is dominated by the nano-scale Ag metal layer. In addition, optimization and control of the thickness of the nano-scale Ag layer are important in obtaining highly transparent ZTO/Ag/ZrO electrodes, because antireflection is strongly influenced by Ag thickness. Moreover, IOSCs fabricated on optimized ZTO/Ag/ZTO electrodes with Ag thicknesses of 12 nm showed power conversion efficiencies (2.55%) comparable to that of an IOSC prepared on a crystalline ITO electrode (2.45%), due to the low sheet resistance and high optical transmittance in the range of 400-600 nm. The performances of ZTO/Ag/ZTO multilayer electrodes indicate that ZTO/Ag/ZTO multilayers are promising as indium-free, transparent electrode substitutes for conventional ITO electrodes in cost-efficient IOSCs. (C) 2011 Elsevier B.V. All rights reserved.
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Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Choi, Kwang-Hyuk
;
Nam, Ho-Jun
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Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Nam, Ho-Jun
;
Jeong, Jin-A
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Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Jeong, Jin-A
;
Cho, Sung-Woo
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Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Cho, Sung-Woo
;
Kim, Han-Ki
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Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Kim, Han-Ki
;
Kang, Jae-Wook
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Korea Inst Mat Sci, Surface Technol Res Ctr, Changwon Si 641831, Gyeongnam, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Kang, Jae-Wook
;
Kim, Do-Geun
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Korea Inst Mat Sci, Surface Technol Res Ctr, Changwon Si 641831, Gyeongnam, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Kim, Do-Geun
;
Cho, Woon-Jo
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Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
机构:
Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Choi, Kwang-Hyuk
;
Nam, Ho-Jun
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机构:
Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Nam, Ho-Jun
;
Jeong, Jin-A
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机构:
Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Jeong, Jin-A
;
Cho, Sung-Woo
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机构:
Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Cho, Sung-Woo
;
Kim, Han-Ki
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机构:
Kumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Kim, Han-Ki
;
Kang, Jae-Wook
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机构:
Korea Inst Mat Sci, Surface Technol Res Ctr, Changwon Si 641831, Gyeongnam, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Kang, Jae-Wook
;
Kim, Do-Geun
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机构:
Korea Inst Mat Sci, Surface Technol Res Ctr, Changwon Si 641831, Gyeongnam, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea
Kim, Do-Geun
;
Cho, Woon-Jo
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h-index: 0
机构:
Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South KoreaKumoh Natl Inst Technol KIT, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea