The effect of Ar+ ion bombardment on SiO2 aerogel film

被引:9
作者
Kim, HR [1 ]
Park, HH [1 ]
机构
[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12B期
关键词
SiO2; aerogel; intermetal dielectric; low dielectric; Ar+ ion bombardment;
D O I
10.1143/JJAP.37.6955
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ar+ ion bombardment on SiO2 aerogel films was introduced to investigate the physical collision effect of oxygen plasma treatment on the films. The changes of internal surface adsorbing species and microstructure in the films were analyzed through the treatments. Through chemically inert Ar+ ion bombarding treatment, internal surface organic groups were partially removed. A slight increase in surface particle size was observed, which results from the condensation of SiO2 particles due to the elimination of internal surface adsorbing organics. According to the increase in the accelerating voltage of Ar+ ion, the reduction of film thickness became larger than that observed with oxygen plasma treatment. The film thickness is maintained uniform with varying the treatment time and this confirms that there is no measurable etching happened within our treatment conditions. From these it is confirmed that a collapse of 3-dimensional network structure of SiO2 aerogel film was happened though Ar+ ion bombarding treatment.
引用
收藏
页码:6955 / 6958
页数:4
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