Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

被引：501

作者：

Park, NM

Choi, CJ

Seong, TY

Park, SJ ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Kwangju Inst Sci & Technol, Ctr Optoelect Mat Res, Kwangju 500712, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.86.1355

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Amorphous silicon quantum dots (a-Si QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Transmission electron micrographs clearly demonstrated that tr-Si QDs were formed in the silicon nitride. Photoluminescence and optical absorption energy measurement of cl-Si QDs with various sizes revealed that tuning of the photoluminescence emission from 2.0 to 2.76 eV is possible by controlling the size of the tr-Si QD. Analysis also showed that the photoluminescence peak energy E was related to the size of the a-Si QD, a (nm) by E(eV) = 1.56 + 2.40/a(2). which is a clear evidence for the quantum confinement effect in a-Si QDs.

引用

页码：1355 / 1357

页数：3

共 21 条

[11] Quantum confined luminescence in Si/SiO2 superlattices [J].