Ion beam-induced luminescence of Eu-implanted Al2O3 and CaF2

A study has been made of the luminescence induced by Ar+- or He+-bombardment on Eu+-implanted Al2O3 and CaF2. Eu+-ions of 100 keV were implanted into alpha-Al2O3 and CaF2 at fluences of 5 x 10(14) and 1 x 10(15) ions/cm(2) at room temperature. The luminescence spectra were measured during bombardment by 100 keV Ar+ or 50 keV He+ of samples implanted with Eu using a spectrophotometer with three optical filters and photomultiplier. The luminescence spectra emitted during He-bombardment of unimplanted Al2O3 contains peaks at 340 and 420 nm. Luminescence due to color centers was also observed in CaF2. The luminescence spectra emitted from Eu-implanted Al2O3 by Ar or He bombardment have peaks identified as emission due to the Eu3+ state. The luminescence spectra are enhanced after annealing, The intensity of luminescence due to Eu3+ states induced by He-bombardment is stronger than that by Ar-bombardment, although the energy loss due to ionization for He bombardment is lower than for Ar bombardment. In the case of Eu-implanted CaF2, there are peaks identified as emission due to both Eu2+ and Eu3+ states. (C) 1998 Elsevier Science B.V. All rights reserved.