Properties of liquid silicon observed by time-resolved x-ray absorption spectroscopy

被引：71

作者：

Johnson, SL ^{[1
]}

Heimann, PA

Lindenberg, AM

Jeschke, HO

Garcia, ME

Chang, Z

Lee, RW

Rehr, JJ

Falcone, RW

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[3] Free Univ Berlin, Inst Theoret Phys, D-14195 Berlin, Germany

[4] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

[5] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

[6] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[7] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Beam Phys, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.91.157403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Time-resolved x-ray spectroscopy at the Si L edges is used to probe the electronic structure of an amorphous Si foil as it melts following absorption of an ultrafast laser pulse. Picosecond temporal resolution allows observation of the transient liquid phase before vaporization and before the liquid breaks up into droplets. The melting causes changes in the spectrum that match predictions of molecular dynamics and ab initio x-ray absorption codes.

引用

页码：157403 / 157403

页数：4

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