Non-toxic liquid-metal 2-100 GHz MEMS switch

被引:38
作者
Chen, Chung-Hao [1 ]
Whalen, John [1 ]
Peroulis, Dimitrios [1 ]
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源
2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年
关键词
RF; liquid metal; Galinstan; MEMS; shunt switch;
D O I
10.1109/MWSYM.2007.380446
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the first wide-band MEMS capacitive switch using non-toxic liquid metal, Galinstan, is reported. Controlled movement of Galinstan in a micro-channel alters the impedance of a coplanar waveguide (CPW) line from 5052 (off-state) to an effective R,F short: circuit (on-state). The RF short circuit in particular is achieved when a slug of Galinstan capacitively connects the center conductor with the ground planes of the CPW line. Galinstan is reliably manipulated by surrounding it with Teflon solution. Because of Teflon, no residual liquid metal is observed when Galinstan moves. In addition, the Teflon solution has insignificant R,F loss and therefore does not adversely affect the switch loss in its off-state even up to 100GHz. The insertion loss of the switch is measured at 0.2, 0.7 and 1.3dB at 20, 40 and 100GHz respectively and is mainly due to the 1500 mu m long transmission line. The on-state shunt capacitance is measured to be 4pF which results in an on-state isolation of greater than 20dB from 20 to 100GHz.
引用
收藏
页码:363 / 366
页数:4
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