Effect of H2 dilution on the surface composition of plasma-deposited silicon films from SiH4

被引：16

作者：

Marra, DC

Edelberg, EA

Naone, RL

Aydil, ES ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED SURFACE SCIENCE | 1998年 / 133卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

attenuated total reflection Fourier transform infrared spectroscopy amorphous silicon; nanocrystalline silicon; plasma deposition;

D O I：

10.1016/S0169-4332(98)00214-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface composition of silicon films deposited from SiH4, Ar, and H-2 plasmas was studied using in situ attenuated total reflection Fourier transform infrared spectroscopy with emphasis on the effects of H-2 dilution. In the absence of H-2, the surface is primarily covered with SiH3 and SiH2. With heavy H-2 dilution, the surface is predominantly monohydride terminated with infrared absorption frequencies consistent with the presence of SiH on Si (100) and Si (111) surfaces. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：148 / 151

页数：4

共 15 条

[1] PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON - STUDIES OF THE GROWTH SURFACE [J].