Resistivity due to low-symmetrical defects in metals

被引：5

作者：

Dekker, JP ^{[1
]}

Lodder, A ^{[1
]}

van Ek, J ^{[1
]}

机构：

[1] Free Univ Amsterdam, Fac Nat Kunde Sterrenkunde, NL-1081 HV Amsterdam, Netherlands

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.57.12719

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impurity resistivity, also known as the residual resistivity, is calculated ab initio using multiple-scattering theory. The mean free path is calculated by solving the Boltzmann equation iteratively. The resistivity due to low-symmetrical defects is calculated for the fee host metals Al and Ag and the bcc transition metal V. Commonly, 1/f noise is attributed to the motion of such defects in a diffusion process. The results for single impurities compare well to calculations by other authors and to experimental values.

引用

页码：12719 / 12726

页数：8

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