Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

被引:77
作者
Simin, G [1 ]
Hu, X
Ilinskaya, N
Zhang, J
Tarakji, A
Kumar, A
Yang, J
Khan, MA
Gaska, R
Shur, MS
机构
[1] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA
[2] Sensor Elect Technol Inc, Latham, NY 12110 USA
关键词
ALGaN; FET; GaN; HFET; microwave; MOSHFET;
D O I
10.1109/55.902829
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (HFET) over SiC substrates with peripheries from 0.15 to 6 mm, These multigate devices with source interconnections were fabricated using a novel oxide-bridging approach. The saturation current was as high as 5.1 A for a 6 mm wide device with a gate leakage of 1 muA/cm(2) for 1.5 mum gate length in a 5 mum source-drain opening. The cutoff frequency of around 8 GHz was practically independent of the device periphery, Large-signal output rf-power as high as 2.88 W/mm was measured at 2 GHz, Both the saturation current and the rf-power scaled nearly linearly with the gate width.
引用
收藏
页码:53 / 55
页数:3
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