Inversion behavior in thermally oxidized p-GaN metal-oxide-semiconductor capacitors

被引：21

作者：

Nakano, Y ^{[1
]}

Kachi, T

Jimbo, T

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[2] Nagoya Inst Technol, Nagoya, Aichi 4668555, Japan

[3] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 05期

关键词：

D O I：

10.1116/1.1612937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of thermally oxidized p-GaN metal-oxide-semiconductor (MOS) capacitors fabricated on sapphire substrates have been investigated electrically. 100-nm-thick beta-Ga2O3 was grown by thermal dry oxidation of Mg-doped GaN at 880 degreesC for 5 h. Capacitance-voltage measurements at room temperature show a low interface trap density of similar to 1 X 10(10) eV(-1) cm(-2) and display peculiar behavior that is different from a deep depletion feature. These results indicate some possibilities of surface inversion in thermally grown beta-Ga2O3 /p-GaN MOS structures without any n(+) source regions. (C) 2003 American Vacuum Society.

引用

页码：2220 / 2222

页数：3

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