Influence of charge disorder in networks of small tunnel junctions

被引：2

作者：

Lafarge, P ^{[1
]}

Meindersma, JJ ^{[1
]}

Mooij, JE ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DELFT INST MICROELECT & SUBMICRON TECHNOL,NL-2600 GA DELFT,NETHERLANDS

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷

关键词：

D O I：

10.1007/BF02571172

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated experimentally the transport properties of two-dimensional arrays of small tunnel junctions in the charging regime. In such arrays, the random offset charges caused by impurities in the underlying substrate or in the tunnel barriers are expected to strongly affect the conduction. The current through the arrays oscillates periodically with the gate voltage and we have found a linear dependence of the Coulomb voltage gap with the length of the array. These results are a direct measurement of the influence of charge disorder on Coulomb blockade and are in good agreement with theoretical predictions.

引用

页码：2361 / 2362

页数：2

共 3 条

[1] STATICS AND DYNAMICS OF SINGLE-ELECTRON SOLITONS IN 2-DIMENSIONAL ARRAYS OF ULTRASMALL TUNNEL-JUNCTIONS [J].

BAKHVALOV, NS ;

KAZACHA, GS ;

LIKHAREV, KK ;

SERDYUKOVA, SI .

PHYSICA B, 1991, 173 (03) :319-328

[2] COLLECTIVE TRANSPORT IN ARRAYS OF SMALL METALLIC DOTS [J].

MIDDLETON, AA ;

WINGREEN, NS .

PHYSICAL REVIEW LETTERS, 1993, 71 (19) :3198-3201

[3] SCALING BEHAVIOR IN THE CURRENT-VOLTAGE CHARACTERISTIC OF ONE-DIMENSIONAL AND 2-DIMENSIONAL ARRAYS OF SMALL METALLIC ISLANDS [J].

RIMBERG, AJ ;

HO, TR ;

CLARKE, J .

PHYSICAL REVIEW LETTERS, 1995, 74 (23) :4714-4717

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