Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells

被引：49

作者：

Adachi, T ^{[1
]}

Ohno, Y ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E | 2001年 / 10卷 / 1-3期

基金：

日本学术振兴会;

关键词：

GaAs/AlGaAs; spin relaxation; electron spin; quantum wells;

D O I：

10.1016/S1386-9477(01)00049-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We measured the electron spin relaxation time tau (s) in n-modulation doped GaAs/AlGaAs(110) multiple quantum wills by pump probe method. The value of tau (s) exceeds 10 ns even at room temperature, which is two orders of magnitude longer than that in (001) GaAs quantum wells. The tau (s), dependence on quantized-electron energy, pump beam power and temperature can qualitatively be explained by the reduction of the electron-hole exchange interaction due to screening. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：36 / 39

页数：4

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