Topological and topological-electronic correlations in amorphous silicon

被引：16

作者：

Pan, Yue ^{[1
]}

Zhang, Mingliang ^{[1
]}

Drabold, D. A. ^{[1
]}

机构：

[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 29期

基金：

美国国家科学基金会;

关键词：

silicon; electrical and electrical properties; ab initio;

D O I：

10.1016/j.jnoncrysol.2008.02.021

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

in this paper, we study several structural models of amorphous silicon, and discuss structural and electronic features common to all. We note spatial correlations between short bonds, and similar correlations between long bonds. Such effects persist under a first principles relaxation of the system and at finite temperature. Next we explore the nature of the band tail states and find the states to possess a filamentary structure. We detail correlations between local geometry and the band tails. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3480 / 3485

页数：6

共 28 条

[1] Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material:: Hydrogenated amorphous silicon [J].