Digital alloy interface grading of an InAlAs/InGaAs quantum cascade laser structure studied by cross-sectional scanning tunneling microscopy

被引:30
作者
Offermans, P
Koenraad, PM
Wolter, JH
Beck, M
Aellen, T
Faist, J
机构
[1] Eindhoven Univ Technol, Dept Semicond Phys, NL-5600 MB Eindhoven, Netherlands
[2] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
关键词
D O I
10.1063/1.1627942
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied an InGaAs/InAlAs quantum cascade laser structure with cross-sectional scanning tunneling microscopy. In the quantum cascade laser structure digital alloy grading was used to soften the barriers of the active region. We show that due to alloy fluctuations, softening of the barriers occurs even without the digital grading. (C) 2003 American Institute of Physics.
引用
收藏
页码:4131 / 4133
页数:3
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