A zone-casting technique for device fabrication of field-effect transistors based on discotic hexa-peri-hexabenzoeoronene

被引：588

作者：

Pisula, W

Menon, A

Stepputat, M

Lieberwirth, I

Kolb, U

Tracz, A

Sirringhaus, H

Pakula, T

Müllen, K

机构：

[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

[2] Plast Log Ltd, Cambridge CB4 0FX, England

[3] Johannes Gutenberg Univ Mainz, Inst Phys Chem, D-55099 Mainz, Germany

[4] Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 06期

关键词：

D O I：

10.1002/adma.200401171

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Field-effect transistors with highly ordered active layers are fabricated by zone-casting discotic dodecyl-substituted hexa-peri-hexabenzocoronene molecules onto hydrophobic substrates to form semiconducting columnar structures (see Figure). The discs form columns that possess long-range order on the scale of square centimeters, and the devices show order-of-magnitude improvements in charge-carrier mobilities over previously reported devices.

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页码：684 / +

页数：7

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