Low-resistance tunnel magnetoresistive head

被引：28

作者：

Ohashi, K ^{[1
]}

Hayashi, K ^{[1
]}

Nagahara, K ^{[1
]}

Ishihara, K ^{[1
]}

Fukami, E ^{[1
]}

Fujikata, J ^{[1
]}

Mori, S ^{[1
]}

Nakada, M ^{[1
]}

Mitsuzuka, T ^{[1
]}

Matsuda, K ^{[1
]}

Mori, H ^{[1
]}

Kamijo, A ^{[1
]}

Tsuge, H ^{[1
]}

机构：

[1] NEC Corp Ltd, Fuchu, Tokyo 1838501, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

TMR head; spin-dependent tunneling; signal-to-noise ratio; in situ natural oxidation;

D O I：

10.1109/20.908506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A tunnel magnetoresistive (TMR) head with a low resistance of about 30 Omega and effective track width of 1.4 mum was fabricated using an in situ natural oxidation (ISNO) technique. Its read-output was almost the same as that expected from test elements at the wafer level. We found no large difference in noise voltages between TMR head and GMR head when their resistance was about 30 Omega. A very low-resistivity TMR element with a resistance-area product of 14 Omega . mum(2) and a fairly high DeltaR/R of 14% was also developed using ISNO, A signal-to-noise ratio consideration suggests that such low resistance is a key to TMR heads for high recording densities.

引用

页码：2549 / 2553

页数：5

共 18 条

[1] The electrical and magnetic response of yoke-type read heads based on a magnetic tunnel junction [J].