Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve

被引:1008
作者
Jedema, FJ
Filip, AT
van Wees, BJ
机构
[1] Univ Groningen, Dept Appl Phys, NL-9747 AG Groningen, Netherlands
[2] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
关键词
D O I
10.1038/35066533
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Finding a means to generate, control and use spin-polarized currents represents an important challenge for spin-based electronics(1-3), or 'spintronics'. Spin currents and the associated phenomenon of spin accumulation can be realized by driving a current from a ferromagnetic electrode into a non-magnetic metal or semiconductor. This was first demonstrated over 15 years ago in a spin injection experiment(4) on a single crystal aluminium bar at temperatures below 77 K. Recent experiments(5-8) have demonstrated successful optical detection of spin injection in semiconductors, using either optical injection by circularly polarized light or electrical injection from a magnetic semiconductor. However, it has not been possible to achieve fully electrical spin injection and detection at room temperature. Here we report room-temperature electrical injection and detection of spin currents and observe spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips. We anticipate that larger signals should be obtainable by optimizing the choice of materials and device geometry.
引用
收藏
页码:345 / 348
页数:5
相关论文
共 26 条
  • [1] AHSCROFT NW, 1976, SOLID STATE PHYSICS, V38, pCH2
  • [2] Perpendicular transport of spin-polarized electrons through magnetic nanostructures
    Ansermet, JP
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (27) : 6027 - 6050
  • [3] Finite-element theory of transport in ferromagnet-normal metal systems
    Brataas, A
    Nazarov, YV
    Bauer, GEW
    [J]. PHYSICAL REVIEW LETTERS, 2000, 84 (11) : 2481 - 2484
  • [4] CRANGLE J, 1977, MAGNETIC PROPERTIES, pCH6
  • [5] Dubois S, 1999, PHYS REV B, V60, P477, DOI 10.1103/PhysRevB.60.477
  • [6] Spin accumulation and domain wall magnetoresistance in 35 nm Co wires
    Ebels, U
    Radulescu, A
    Henry, Y
    Piraux, L
    Ounadjela, K
    [J]. PHYSICAL REVIEW LETTERS, 2000, 84 (05) : 983 - 986
  • [7] Theory of the bipolar spin switch
    Fert, A
    Lee, SF
    [J]. PHYSICAL REVIEW B, 1996, 53 (10): : 6554 - 6565
  • [8] Injection and detection of a spin-polarized current in a light-emitting diode
    Fiederling, R
    Keim, M
    Reuscher, G
    Ossau, W
    Schmidt, G
    Waag, A
    Molenkamp, LW
    [J]. NATURE, 1999, 402 (6763) : 787 - 790
  • [9] Experimental search for the electrical spin injection in a semiconductor
    Filip, AT
    Hoving, BH
    Jedema, FJ
    van Wees, BJ
    [J]. PHYSICAL REVIEW B, 2000, 62 (15) : 9996 - 9999
  • [10] Perpendicular giant magnetoresistance of magnetic multilayers
    Gijs, MAM
    Bauer, GEW
    [J]. ADVANCES IN PHYSICS, 1997, 46 (3-4) : 285 - 445