Physical mechanisms in double-carrier trap-charge limited transport processes in organic electroluminescent devices: A numerical study

被引：103

作者：

Shen, J ^{[1
]}

Yang, J

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 12期

关键词：

D O I：

10.1063/1.367942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a numerical model to simulate the double-carrier injection trap-charge limited (TCL) transport processes in organic electroluminescent devices (OEDs). Current-voltage characteristics, energy and charge profiles are obtained and analyzed to understand the mechanisms governing the OED performance under TCL conditions. Good agreement with general experimental trends and previous analytical predictions are achieved. Dependencies on several important parameters (carrier injection level, device thickness, recombination constant, temperature, etc.) are also studied. (C) 1998 American Institute of Physics.

引用

页码：7706 / 7714

页数：9

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