The structural and electrical properties of thermally grown TiO2 thin films

We studied the structural and electrical properties of TiO2 thin films grown by thermal oxidation of e-beam evaporated Ti layers on Si substrates. Time of flight secondary ion mass spectroscopy (TOF-SIMS) was used to analyse the interfacial and chemical composition of the TiO2 thin films. Metal oxide semiconductor (MOS) capacitors with Pt or Al as the top electrode were fabricated to analyse electrical properties of the TiO2 thin films. We show that the reactivity of the Al top contact affects electrical properties of the oxide layers. The current transport mechanism in the TiO2 thin films is shown to be Poole-Frenkel (P-F) emission at room temperature. At 84 K, Fowler-Nordheim (F-N) tunnelling and trap-assisted tunnelling are observed. By comparing the electrical characteristics of thermally grown TiO2 thin films with the properties of those grown by other techniques reported in the literature, we suggest that, irrespective of the deposition technique, annealing of as-deposited TiO2 in O-2 is a similar process to thermal oxidation of Ti thin films.