Nanofluidic diode and bipolar transistor

被引:378
作者
Daiguji, H [1 ]
Oka, Y [1 ]
Shirono, K [1 ]
机构
[1] Univ Tokyo, Inst Environm Sci, Grad Sch Frontier Sci, Tokyo 1130033, Japan
关键词
D O I
10.1021/nl051646y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Theoretical modeling of ionic distribution and transport in a nanochannel containing a surface charge on its wall, 30 nm high and 5 mu m long, suggests that ionic current can be controlled by locally modifying the surface charge density through a gate electrode, even if the electrical double layers are not overlapped. When the surface charge densities at the right and left halves of a channel are the same absolute value but of different signs, this could form the basis of a nanofluidic diode. When the surface charge density at the middle part of a channel is modified, this could form the basis of a nanofluidic bipolar transistor.
引用
收藏
页码:2274 / 2280
页数:7
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