Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal-insulator-semiconductor characteristics

被引：194

作者：

Kita, Koji ^{[1
]}

Suzuki, Sho ^{[1
]}

Nomura, Hideyuki ^{[1
]}

Takahashi, Toshitake ^{[1
]}

Nishimura, Tomonori ^{[1
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

germanium; germanium oxide; MIS capacitor; interface; C-V characteristics; TDS; volatilization; cap layer; Ni-silicide;

D O I：

10.1143/JJAP.47.2349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

From the studies on the thermal desorption behaviors of GeO2 film and its impact on the electrical properties of GeO2/Ge metal-insulator-semiconductor (MIS) capacitors, it was clarified that the GeO volatilization is driven by the interface reaction at GeO2/Ge, and that volatilization is the origin of the interface deterioration of the MIS capacitors. We found that a Si cap layer formed on top of the GeO2 film suppresses the GeO desorption very efficiently. Then, a marked improvement of the capacitance-voltage (C-V) characteristics was successfully demonstrated with the GeO2/Ge MIS capacitors fabricated by capped annealing process, where a Ni silicide electrode was used as the cap layer. These results provided us quite an important guide for realizing high-quality Ge/dielectric interfaces.

引用

页码：2349 / 2353

页数：5

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