Photoluminescence and Raman study of hexagonal InN and in-rich InGaN alloys

被引：30

作者：

Davydov, VY

Klochikhin, AA

Emtsev, VV

Smirnov, AN

Goncharuk, IN

Sakharov, AV

Kurdyukov, DA

Baidakova, MV

Vekshin, VA

Ivanov, SV

Aderhold, J

Graul, J

Hashimoto, A

Yamamoto, A

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Inst Phys Nucl, St Petersburg 188350, Russia

[3] Lfl Univ Hannover, D-30167 Hannover, Germany

[4] Fukui Univ, Dept Elect Engn, Fukui 9108507, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 240卷 / 02期

关键词：

D O I：

10.1002/pssb.200303448

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present results of a detailed study of X-ray, photoluminescence, and Raman measurements of hexagonal InN, In-rich InxGa1-xN (0.36 < x < 1) alloys, and InN samples annealed in oxygen. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：425 / 428

页数：4

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