Laser-induced activation of p-type GaN with the second harmonics of a Nd:YAG laser

被引：10

作者：

Cheng, YC

Liao, CC

Feng, SW

Yang, CC

Lin, YS

Ma, KJ

Chou, CC

Lee, CM

Chyi, JI

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

[3] Chung Cheng Inst Technol, Dept Mech Engn, Taoyuan, Taiwan

[4] Natl Cent Univ, Dept Elect Engn, Chungli, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 4A期

关键词：

Mg-doped GaN; p-type activation; thermal activation; laser-induced activation;

D O I：

10.1143/JJAP.40.2143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnesium-doped p-type GaN has been activated by irradiation with photons of 532 nm wavelength from the second harmonic of a Q-switched neodymium-doped ytterbium aluminum garnet (Nd:YAG) laser. With appropriate laser fluence levels and irradiation pulse numbers, such a laser-induced activation process resulted in a hole concentration about the same as that obtained through the conventional thermal activation technique. Temperature measurement revealed that the laser-induced process is very unlikely to be thermal. It was speculated that the process might involve the photon-induced breaking of the H-Ma bonds.

引用

页码：2143 / 2145

页数：3

共 7 条

[1] Nature of the 2.8 eV photoluminescence band in Mg doped GaN [J].