Plasma-enhanced chemical vapor deposition of organosilicon materials: A comparison of hexamethyldisilane and tetramethylsilane precursors

被引：43

作者：

Fonseca, JLC ^{[1
]}

Tasker, S ^{[1
]}

Apperley, DC ^{[1
]}

Badyal, JPS ^{[1
]}

机构：

[1] UNIV DURHAM,SCI LABS,DEPT CHEM,DURHAM DH1 3LE,ENGLAND

来源：

MACROMOLECULES | 1996年 / 29卷 / 05期

关键词：

D O I：

10.1021/ma950222v

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Plasma polymerization of hexamethyldisilane ([CH3]3SiSi[CH3](3)) and tetramethylsilane ([CH3]Si-4) has been investigated by XPS, FTIR, solid state NMR, and plasma emission diagnostics. Thin carbosilane films and powders can be deposited by this method. Hexamethyldisilane is found to undergo glow discharge polymerization much more readily than tetramethylsilane; this has been attributed to the chromophoric ''Si-Si'' bond contained in the former precursor.

引用

页码：1705 / 1710

页数：6

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