Semi-insulating GaN and its evaluation for α particle detection

被引：47

作者：

Vaitkus, J

Cunningham, W

Gaubas, E

Rahman, M

Sakai, S

Smith, KM

Wang, T

机构：

[1] Vilnius Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

[2] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[3] Univ Tokushima, Satellite Venture Business Lab, Dept Elect & Elect Engn, Tokushima 770, Japan

[4] Nitride Semicond Co Ltd, Tokushima 7710360, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 509卷 / 1-3期

关键词：

GaN; alpha-particle detection;

D O I：

10.1016/S0168-9002(03)01550-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The application of semi-insulating GaN for detection of ionising particles, specifically alpha-particles, is presented. The electrical properties of GaN epitaxial layers have been investigated and the space charge limited and Ohmic currents were observed. A microwave method was used for temporal measurements if the photocurrent. Transient behaviour of the injection current and photo-response was observed, with a wide range of instantaneous time constants. The charge collection efficiency was measured to be approximately 100% and the role of inhomogeneities in the charge collection peculiarities was analysed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：60 / 64

页数：5

共 9 条

[1] Persistent photoconductivity in n-type GaN [J].