New physics and devices based on self-assembled semiconductor quantum dots

被引:128
作者
Mowbray, DJ [1 ]
Skolnick, MS [1 ]
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
关键词
D O I
10.1088/0022-3727/38/13/002
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states and high radiative efficiencies. This makes them highly suitable both for fundamental physics studies of zero-dimensionality, atomic-like semiconductor systems and applications in a range of novel electro-optical devices. This review discusses recent important advances in the study and application of semiconductor QDs. Using a wide range of optical spectroscopy techniques, it is possible to obtain a detailed understanding of the electronic structure and dynamical carrier processes. Such an understanding is required for the implementation of a wide range of QD-based devices.
引用
收藏
页码:2059 / 2076
页数:18
相关论文
共 145 条
[1]   Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots [J].
Adawi, AM ;
Zibik, EA ;
Wilson, LR ;
Lemaître, A ;
Cockburn, JW ;
Skolnick, MS ;
Hopkinson, M ;
Hill, G ;
Liew, SL ;
Cullis, AG .
APPLIED PHYSICS LETTERS, 2003, 82 (20) :3415-3417
[2]   Pattern-effect-free semiconductor optical amplifier achieved using quantum dots [J].
Akiyama, T ;
Hatori, N ;
Nakata, Y ;
Ebe, H ;
Sugawara, M .
ELECTRONICS LETTERS, 2002, 38 (19) :1139-1140
[3]   Symmetric highly efficient (∼0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers [J].
Akiyama, T ;
Kuwatsuka, H ;
Hatori, N ;
Nakata, Y ;
Ebe, H ;
Sugawara, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (08) :1139-1141
[4]   Stark-shift modulation absorption spectroscopy of single quantum dots [J].
Alén, B ;
Bickel, F ;
Karrai, K ;
Warburton, RJ ;
Petroff, PM .
APPLIED PHYSICS LETTERS, 2003, 83 (11) :2235-2237
[5]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[6]   GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].
ASADA, M ;
MIYAMOTO, Y ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921
[7]   Response spectra from mid- to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors [J].
Aslan, B ;
Liu, HC ;
Korkusinski, M ;
Cheng, SJ ;
Hawrylak, P .
APPLIED PHYSICS LETTERS, 2003, 82 (04) :630-632
[8]   Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots [J].
Barker, JA ;
O'Reilly, EP .
PHYSICAL REVIEW B, 2000, 61 (20) :13840-13851
[9]   Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots -: art. no. 195315 [J].
Bayer, M ;
Ortner, G ;
Stern, O ;
Kuther, A ;
Gorbunov, AA ;
Forchel, A ;
Hawrylak, P ;
Fafard, S ;
Hinzer, K ;
Reinecke, TL ;
Walck, SN ;
Reithmaier, JP ;
Klopf, F ;
Schäfer, F .
PHYSICAL REVIEW B, 2002, 65 (19) :1953151-19531523
[10]   Hidden symmetries in the energy levels of excitonic 'artificial atoms' [J].
Bayer, M ;
Stern, O ;
Hawrylak, P ;
Fafard, S ;
Forchel, A .
NATURE, 2000, 405 (6789) :923-926