Nanofabrication on Si oxide with scanning tunneling microscope: Mechanism of the low-energy electron-stimulated reaction

被引：20

作者：

Li, N ^{[1
]}

Yoshinobu, T ^{[1
]}

Iwasaki, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期

关键词：

D O I：

10.1063/1.123636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanofabrication on Si oxide with a low-energy electron-beam-stimulated reaction has been demonstrated using scanning tunneling microscopy (STM) and the mechanism of the low-energy electron-induced etching is investigated further. Direct fabrication of a thin Ag film with this low-energy e-beam/STM method was also tested, which shows an additional capability of the nanofabrication technique. Nanometer-scale patterning of rings on a thin Si-oxide layer using this method shows that further progress nanolithography can be expected with the fabricated Si oxide as a mask. (C) 1999 American Institute of Physics. [S0003-6951(99)02211-1].

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页码：1621 / 1623

页数：3

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