Application of plasma polymerized methylsilane for 0.18μm photolithography

被引：10

作者：

Monget, C ^{[1
]}

Lee, C ^{[1
]}

Joubert, O ^{[1
]}

Amblard, G ^{[1
]}

Weidman, TW ^{[1
]}

Sugiarto, D ^{[1
]}

Yang, J ^{[1
]}

Cormont, F ^{[1
]}

Inglebert, RL ^{[1
]}

机构：

[1] France Telecom, Ctr Natl Etud Telecommun, DTM, F-38243 Meylan, France

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

D O I：

10.1117/12.312426

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Plasma polymerized methylsilane resist films (PPMS) have high sensitivity to short wavelength radiation. The photoinduced oxidation of PPMS films exposed in air forms siloxane network material (called PPMSO), allowing dry development by selective etching of the unexposed regions upon treatment with chlorine based plasmas. Negative-tone patterns of oxidized methylsilane thus formed can be consolidated in a standard resist stripper to form SiO2 like hard mask patterns. In this work, PPMS films are deposited using a commercial single wafer cluster tool dedicated to dielectric deposition. After exposure at 248 or 193 nm, PPMS development is performed in a commercial high density plasma source etcher. Oxide patterns obtained from PPMS films are used for organic resist patterning (bi-layer application) and gate stack patterning (single layer application).

引用

页码：366 / 375

页数：2