Wide bandgap semiconductor materials and devices

被引:213
作者
Yoder, MN
机构
[1] Office of Naval Research, Electronics Division, Arlington
关键词
D O I
10.1109/16.536807
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Given a matrix of all semiconductor materials and their properties, the highest and the lowest of these property values will almost always be associated with wide bandgap materials. The many possible combinations of these ''poles and zeros'' lead not only to superlative electron device performance, but to new device concepts as well. An overview of wide bandgap semiconductor properties is presented followed by several concepts for both new and enhanced devices. Finally, impediments to immediate exploitation and a time-oriented appraisal of the various materials and devices is presented.
引用
收藏
页码:1633 / 1636
页数:4
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