Effects of piezoelectric fields in GaInN/GaN and GaN/AlGaN heterostructures and quantum wells

被引：37

作者：

Im, JS ^{[1
]}

Kollmer, H ^{[1
]}

Off, J ^{[1
]}

Sohmer, A ^{[1
]}

Scholz, F ^{[1
]}

Hangleiter, A ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

NITRIDE SEMICONDUCTORS | 1998年 / 482卷

关键词：

D O I：

10.1557/PROC-482-513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of piezoelectric fields on the static and dynamic optical properties of GaInN/GaN and GaN/AlGaN double heterostructures and single quantum wells are studied by time-resolved photoluminescence. We find a strong increase of the luminescence decay time of the dominating transition with well thickness by several orders of magnitude. For well thicknesses larger than about 5 nm, two emission lines with strongly differing decay times are observed, which are attributed to spatially direct and indirect transitions. Our experimental findings are consistently explained by a quantitative model based on the piezoelectric fields in strained wurtzite quantum wells.

引用

页码：513 / 518

页数：6