Infrared conductivity mapping for nanoelectronics

被引：81

作者：

Knoll, B ^{[1
]}

Keilmann, F ^{[1
]}

机构：

[1] Max Planck Inst Biochem, D-82152 Martinsried, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1330756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With ever shrinking dimensions in microelectronics, the conductivity performance of charge carriers approaches physical limits and demands tighter control. We show that near-field microscopy carried out at sufficiently long infrared wavelengths-below the plasma frequency-selectively detects and characterizes subsurface mobile carriers with 30 nm resolution, timely for next generation chips as well as for fundamental research, e.g., on low-dimensional electron systems. (C) 2000 American Institute of Physics. [S0003-6951(00)00850-0].

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页码：3980 / 3982

页数：3

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