Fabrication of high frequency DC-DC converter using Ti/FeTaN film inductor

被引:18
作者
Kim, CS
Bae, S
Kim, HJ
Nam, SE
Kim, HJ
机构
[1] Hongik Univ, Dept Met & Mat Sci, Mapo Gu, Seoul 121791, South Korea
[2] Hanyang Univ, Sch Elect & Comp Engn, Kyunggi Do 425791, South Korea
关键词
DC-DC converter; FeTaN; thin film inductor;
D O I
10.1109/20.951339
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated a planar-type film inductor with good high frequency characteristics using a FeTaN soft magnetic film. While FeTaN films inherently show good soft magnetic properties and high saturation magnetization, addition of Ti underlayer with a combination of magnetic field annealing leads to an increase of anisotropy field (H-k), thus improving high frequency characteristics. Planar-type spiral inductors using Ti/FeTaN films exhibit an inductance of similar to1 muH, resistance of similar to2 ohm, and Q factor of 2.3 at 2 MHz. We also fabricated a hybrid ZVS-CV buck converter using the film inductor. The converter shows about 80% of the conversion efficiency at 1.2 MHz, which withstands the load current up to 300 mA.
引用
收藏
页码:2894 / 2896
页数:3
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