Comparison of CdS thin films prepared by different techniques for applications in solar cells as window materials

被引:16
作者
Ileperuma, OA [1 ]
Vithana, C
Premaratne, K
Akuranthilaka, SN
McGregor, SM
Dharmadasa, IM
机构
[1] Univ Peradeniya, Fac Sci, Peradeniya, Sri Lanka
[2] Sheffield Hallam Univ, Div Appl Phys, Sheffield S1 1WB, S Yorkshire, England
关键词
D O I
10.1023/A:1008988227005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CdS thin films as window materials for solar cells have been prepared by three procedures; chemical bath deposition, electrodeposition in an aqueous medium at 80 degrees C and electrodeposition in a non-aqueous medium at 170 degrees C. As deposited films along with those obtained after annealing in air at 400 degrees C for 15 min were studied using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), glow discharge optical emission spectroscopy (GDOES), scanning electron microscopy (SEM), optical absorption spectra and photoelectrochemical spectroscopy (PEC) techniques under identical experimental conditions. X-ray diffraction data indicate the formation of hexagonal CdS as the predominent phase, but the SEM studies show that their textures are widely dependent on the conditions employed. GDOES profiling indicates the incorporation of Na and Si into CdS films prepared by all three techniques. Annealing of chemical bath deposited films causes a red shift of the absorbance edge and also a shift in the maxima of the photocurrent action spectra towards the low energy side. However, this effect was comparatively negligible for the samples prepared by the other two techniques. PEC studies indicate that CdS materials grown by all three techniques are all n-type. All studies indicate that the films grown at 170 degrees C using non-aqueous solutions are of better crystallinity and of improved electrical properties. (C) 1998 Kluwer Academic Publishers.
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收藏
页码:367 / 372
页数:6
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