Amorphous silicon detector and thin film transistor technology for large-area imaging of X-rays

被引：48

作者：

Nathan, A ^{[1
]}

Park, B ^{[1
]}

Sazonov, A ^{[1
]}

Tao, S ^{[1
]}

Chan, I ^{[1
]}

Servati, P ^{[1
]}

Karim, K ^{[1
]}

Charania, T ^{[1
]}

Striakhilev, D ^{[1
]}

Ma, Q ^{[1
]}

Murthy, RVR ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

MICROELECTRONICS JOURNAL | 2000年 / 31卷 / 11-12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

amorphous silicon technology; thin film transistors; imaging arrays;

D O I：

10.1016/S0026-2692(00)00082-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability. Also, issues pertinent to thin film transistor stability are presented along with optimization of materials and processing conditions for reduced V-T-shift and leakage current. Selected results are shown for X-ray and optical detectors, thin film transistors, and integrated X-ray pixel structures. Extension of the current fabrication processes to low (similar to 120 degreesC) temperature, enabling fabrication of thin film electronics on flexible (polymer) substrates, are also discussed along with preliminary results. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：883 / 891

页数：9

共 30 条

[1] a-Si:H Schottky diode direct detection pixel for large area x-ray imaging [J].

Aflatooni, K ;

Nathan, A ;

Hornsey, R ;

Cunningham, IA ;

Chamberlain, CG .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :197-200

[2]

[Anonymous], 1992, AMORPHOUS MICROCRYST

[3] Enhanced multipole acceleration technique for the solution of large Poisson computations [J].

Bachtold, M ;

Korvink, JG ;

Baltes, H .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1996, 15 (12) :1541-1546

[4]

CHARANIA T, 2000, P ECS

[5] High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD materials [J].

Chen, CY ;

Kanicki, J .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (09) :437-439

[6] a-Si:H TFTs made on polyimide foil by PE-CVD at 150°C [J].

Gleskova, H ;

Wagner, S ;

Suo, Z .

FLAT-PANEL DISPLAY MATERIALS-1998, 1998, 508 :73-78

[7]

Greengard L., 1998, RAPID EVALUATION POT

[8] X-ray phosphor deposition technology for co-integration with amorphous silicon imaging arrays [J].

Gu, ZH ;

Tao, S ;

Chan, I ;

Nathan, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (02) :639-642

[9] Reverse current transient behavior in amorphous silicon Schottky diodes at low biases [J].

Hornsey, RI ;

Aflatooni, K ;

Nathan, A .

APPLIED PHYSICS LETTERS, 1997, 70 (24) :3260-3262

[10]

Ma Q, 2000, MATER RES SOC SYMP P, V558, P231

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