Novel amorphous silicon alloy optoelectronic integrated circuits

被引：6

作者：

Kruangam, D ^{[1
]}

Sujaridchai, T ^{[1
]}

Chirakawikul, K ^{[1
]}

Ratwises, B ^{[1
]}

Panyakeow, S ^{[1
]}

机构：

[1] Chulalongkorn Univ, Fac Engn, Dept Elect Engn, Bangkok 10330, Thailand

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

optoelectronic integrated circuits; amorphous silicon; alloys; light emitting diode;

D O I：

10.1016/S0022-3093(98)00208-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Novel amorphous Si alloy optoelectronic integrated circuits (OEICs) were developed. The basic elements used in the amorphous OEICs were a-SiC:H p-i-n thin film light emitting diodes, dielectric optical waveguides, a-Si:II p-i-n thin film photodiodes. These elements were constructed both in the lateral and vertical configurations. It was shown that a glass substrate with a textured-surface could be used as an optical waveguide as well as a distributed Bragg reflector for amorphous OEICs. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1146 / 1150

页数：5

共 4 条

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[2]

KRUANGAM D, 1994, MATER RES SOC SYMP P, V345, P305, DOI 10.1557/PROC-345-305

[3]

KRUANGAM D, 1991, AMORPHOUS MICROCRYST, P195

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